jiangsu changjiang electron ics technology co., ltd sot-523 plastic-encapsulate mosfets 2N7002T mosfet (n-cha nnel) fea ture z high density cell design for low r ds(on) z voltage controlled small signal switch z rugged and reliable z high saturation current capability maximum ratings (t a =25 unless otherwise noted) parameter value unit vgs gate-source voltage 20 v v ds drain-source voltage 60 v i d drain current 115 ma p d power dissipation 150 mw t j junction temperature 150 so t -523 1. gate 2. source 3. drain t stg storage temperature -55~+ 150 thermal resistance from jun c tion to ambient symbol r ja 833 /w www.cj-elec.com 1 j , sep,201 6 marking equivalent circuit application z z load switch for portable devices dc/dc converter v (br)dss r ds(on) max i d 60 v ? 5 @ 10v ? 115m a 7 @ 5v ? ? 1 2 3 k72 k72= device code solid dot = green molding compound device,if none, the normal device.
para mete r symbol t est co nd itio n s m in t yp max unit drain-source breakdown vo lt age v (br)dss v gs =0 v, i d =250 a 60 ga te -thre s hold v o l t a g e v th(gs) v ds =v gs , i d =250 a 1 2.5 v gate-body leakage l gss v ds =0 v , v gs = 20 v 8 0 na zero gate voltage drain curren t i dss v ds = 60 v , v gs = 0 v 80 na on-state drain current i d(on) v gs =10 v, v ds =7 v 500 ma v gs =10 v, i d =500 ma 5 drain-source on-resistance r ds( on) v gs =5 v, i d =50 ma 7 ? forward trans conduct a nce g fs v ds =10 v, i d =200 ma 80 500 ms v gs =10v, i d =500 ma 3.75 v drain - so u r ce o n - v o lt ag e v ds(on) v gs =5 v , i d =5 0 m a 0.375 v diode for w a r d v o l t a g e v sd i s =115ma, v gs =0 v 0.55 1.2 v input capacitance c iss 50 output capacitance c oss 25 reverse transfer capacita n ce c rss v ds = 25v , v gs = 0 v , f=1mhz 5 pf switching time turn-on time t d(on) 20 turn-off time t d(off) v dd = 25 v , r l =5 0 i d =500ma,v gen =10 v r g =25 40 ns mosfet electrical characteristics a t =25 unless otherwise specified www.cj-elec.com 2 j,sep,2016
061 21 8 0 2 4 6 0246 0.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-3 0.01 0.1 1 012345 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 i d =50ma i d =500ma i d r ds(on) t a =25 pulsed v gs r ds(on) on-resistance r ds ( o n) ( ) gate to source voltage v gs (v) t a =25 pulsed t a =25 pulsed transfer characteris t ics drain current i d (a) gate to source voltage v gs (v) 3e- 3 2 t a =25 pulsed 0.3 0.03 v sd i s source current i s (a) source to drain voltage v sd (v) v gs =5v v gs =10v,9v,8v,7v,6v v gs =4v v gs =3v output charact eri stics drain current i d (a) drain to source voltage v ds (v) v gs =5v v gs =10v t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) typical characteristics 3 j,sep,2016
min. max. min. max. a 0.700 0.900 0.028 0.035 a1 0.000 0.100 0.000 0.004 a2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 d 1.500 1.700 0.059 0.067 e 0.700 0.900 0.028 0.035 e1 1.450 1.750 0.057 0.069 e e1 0.900 1.100 0.035 0.043 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.400 ref. 0.016 ref. symbol dimensions in millimeters dimensions in inches 0.500 typ. 0.020 typ.
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